Silica Composite Patterned Sapphire Substrate (SiO₂‑PSS): A silica thin‑film is deposited on the patterned sapphire surface to form a composite structure.The refractive index of SiO₂ (≈1.46) lies between sapphire (1.77) and GaN (2.45), which can further reduce total reflection loss and improve light‑extraction efficiency. Meanwhile, its insulating property suppresses leakage current.
Compared with single‑layer PSS, the composite substrate optimizes the uniformity of epitaxial growth and enhances electrostatic‑discharge (ESD) resistance with good process compatibility.It is widely adopted in high‑efficiency LED and Micro‑LED applications to achieve higher brightness with lower optical loss.
| Item | Specification |
| Height(H) | 1.85~2.05μm |
Base Width(W) | F:2.75-2.80μm 4-2:2.80-2.85μm 4-1:2.85-2.90μm E:2.90-2.95μm |
Gray Scale | F:90-100 4-2:70-90 4-1:55-70 E:50-55 |
| Pitch(d) | 3±0.05μm |
| Radius | <0.18um |
| Flat‑side Angle | 90° |
| Sapphire Height | 0.2-0.3mm |