BOE HC SemiTek independently develops high‑performance infrared LED chips. Supported by mature semiconductor manufacturing processes, the chips feature outstanding photoelectric conversion efficiency, high luminous efficacy and low power consumption, greatly improving end‑user device experience. The products deliver excellent resistance to current surge. Chips boast highly uniform optoelectronic parameters and favorable batch consistency, eliminating chromatic aberration and performance deviation. In addition, they offer high stability and reliability with low light decay and long service life. Widely applied in touch panels, blood‑oxygen monitoring and other fields, they serve as stable and high‑quality core infrared light sources for end‑devices.
Part Name Planar Structure Chip Type Chip Size (mil2) Application Pad Size (μm) Pad Material Forward Current (mA) Radiant Power (mW) Forward Voltage (V) Peak Wavelength (nm) Maximum Operating Current (mA)
JS16A-SA JS16A-SA Vertical Chip 16*16 Infrared 100 Au 250 220-320 1.4-2.0 845-860 300
IS12A-SA IS12A-SA Vertical Chip 12*12 Infrared 100 Au 100 90-110 1.4-1.8 930-960 150
Contact

Contact: Mr. Tian

Tel: 13914562374

Email: tianhaopeng@hcsemitek.com