Drawing on years of technological accumulation and innovative practice, BOE HC SemiTek has grown into a key player in the gallium‑nitride (GaN) sector. Founded in 2005, the company has focused on the R&D and mass‑production of GaN materials for two decades, building up a world‑leading nitride patent portfolio. Upholding independent R&D and market‑driven innovation, we are committed to delivering more efficient and reliable power solutions for customers. As an IDM (Integrated Device Manufacturer), our business covers multiple links including device design, substrate, epitaxy and chip processing. We boast integrated advantages across design and manufacturing, enabling us to respond efficiently to market demands while securing sustainable development capacity.
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Part Name

Voltage

(V)

Rds(on)‑Typical

(mΩ)

Rds(on)‑Maximum

(mΩ)

Package Type

Vth

(V)

HC700DNN260A700200260Bare die-15
HC700CDB300A700240300DFN8*8_3L2
HC700CDA300A700240300DFN8*8_8L4
HC700CT300A700240300TO2524
HC700CTD300A700240300TO220F4
HC700DNN150A700120150Bare die-15
HC700CDA180A700150180DFN8*8_3L4
HC700CDA180A700150180DFN8*8_8L4
HC700CTD180A700150180TO220F4
HC700CTD180A700150180TO2524
HC700DNN540A700420540Bare die-15
HC700CD600A700480600DFN 5*6_3L2
HC700CDE600A700480600DFN 5*6_8L2
HC700CT600B700480600TO2524
Application

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Contact

Contact: Ms. Zhang

Tel: 18576405226

E‑mail: zhanggan@hcsemitek.com