The 700V 300mΩ DFN8×8 is a high‑performance Gallium Nitride (GaN) power device housed in the compact DFN8×8 package. It features a high breakdown voltage of 700V and a low on‑resistance of 300 mΩ. Boasting small form factor and low high‑frequency loss, it is engineered for high‑efficiency and high‑density power‑management scenarios. Widely adopted in fast‑charging chargers and power adapters, it delivers substantial improvements in charging efficiency and power density. It is well‑suited for smartphones, laptops and various portable smart terminals, enabling compact‑size, high‑speed and high‑efficiency charging solutions.
VDS | 700 V |
VDSS(TR)max | 800 V |
RDS(on)typ | 240 mΩ |
Qg typ | 16 nC |