It features excellent physicochemical stability (high hardness, high melting point, chemical inertness), favorable optical transmittance (especially for visible and ultraviolet light), good insulating property, favorable epitaxy compatibility with GaN, controllable crystal quality and high mechanical strength. It delivers proven performance, high stability, good equipment compatibility and relatively low cost.
| Crystal Material | High Purity Al2O3 (99.996%) |
| Item | Specification |
| Diameter (mm) | 100.2±0.03 |
| Ingot Axial Direction | C‑axis ±0.1° |
| Flat‑Plane Crystal Orientation | A‑axis ±0.1° |
| R‑Axis Direction | 9‑O’Clock Position |
